DF200R12W1H3B27BOMA1
For Reference Only
Part Number | DF200R12W1H3B27BOMA1 |
PNEDA Part # | DF200R12W1H3B27BOMA1 |
Description | IGBT MODULE VCES 1200V 200A |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 7,812 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DF200R12W1H3B27BOMA1 Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | DF200R12W1H3B27BOMA1 |
Category | Semiconductors › Transistors › Transistors - IGBTs - Modules |
Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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DF200R12W1H3B27BOMA1 Specifications
Manufacturer | Infineon Technologies |
Series | - |
IGBT Type | - |
Configuration | 2 Independent |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 30A |
Power - Max | 375W |
Vce(on) (Max) @ Vge, Ic | 1.3V @ 15V, 30A |
Current - Collector Cutoff (Max) | 1mA |
Input Capacitance (Cies) @ Vce | 2nF @ 25V |
Input | Standard |
NTC Thermistor | Yes |
Operating Temperature | -40°C ~ 150°C |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
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