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DF200R12W1H3B27BOMA1

DF200R12W1H3B27BOMA1

For Reference Only

Part Number DF200R12W1H3B27BOMA1
PNEDA Part # DF200R12W1H3B27BOMA1
Description IGBT MODULE VCES 1200V 200A
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,812
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DF200R12W1H3B27BOMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberDF200R12W1H3B27BOMA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
DF200R12W1H3B27BOMA1, DF200R12W1H3B27BOMA1 Datasheet (Total Pages: 11, Size: 747 KB)
PDFDF200R12W1H3B27BOMA1 Datasheet Cover
DF200R12W1H3B27BOMA1 Datasheet Page 2 DF200R12W1H3B27BOMA1 Datasheet Page 3 DF200R12W1H3B27BOMA1 Datasheet Page 4 DF200R12W1H3B27BOMA1 Datasheet Page 5 DF200R12W1H3B27BOMA1 Datasheet Page 6 DF200R12W1H3B27BOMA1 Datasheet Page 7 DF200R12W1H3B27BOMA1 Datasheet Page 8 DF200R12W1H3B27BOMA1 Datasheet Page 9 DF200R12W1H3B27BOMA1 Datasheet Page 10 DF200R12W1H3B27BOMA1 Datasheet Page 11

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DF200R12W1H3B27BOMA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Configuration2 Independent
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)30A
Power - Max375W
Vce(on) (Max) @ Vge, Ic1.3V @ 15V, 30A
Current - Collector Cutoff (Max)1mA
Input Capacitance (Cies) @ Vce2nF @ 25V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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Input Capacitance (Cies) @ Vce

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