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DF200R12KE3HOSA1

DF200R12KE3HOSA1

For Reference Only

Part Number DF200R12KE3HOSA1
PNEDA Part # DF200R12KE3HOSA1
Description IGBT MODULE VCES 1200V 200A
Manufacturer Infineon Technologies
Unit Price
1 ---------- $1,279.2959
50 ---------- $1,219.3289
100 ---------- $1,159.3619
200 ---------- $1,099.3949
400 ---------- $1,049.4224
500 ---------- $999.4499
In Stock 3,576
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DF200R12KE3HOSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberDF200R12KE3HOSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
DF200R12KE3HOSA1, DF200R12KE3HOSA1 Datasheet (Total Pages: 9, Size: 168.26 KB)
PDFDF200R12KE3HOSA1 Datasheet Cover
DF200R12KE3HOSA1 Datasheet Page 2 DF200R12KE3HOSA1 Datasheet Page 3 DF200R12KE3HOSA1 Datasheet Page 4 DF200R12KE3HOSA1 Datasheet Page 5 DF200R12KE3HOSA1 Datasheet Page 6 DF200R12KE3HOSA1 Datasheet Page 7 DF200R12KE3HOSA1 Datasheet Page 8 DF200R12KE3HOSA1 Datasheet Page 9

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DF200R12KE3HOSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)-
Power - Max1040W
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 200A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce14nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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Current - Collector (Ic) (Max)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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NTC Thermistor

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Operating Temperature

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Current - Collector (Ic) (Max)

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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Mounting Type

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