Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DDTB114TU-7-F

DDTB114TU-7-F

For Reference Only

Part Number DDTB114TU-7-F
PNEDA Part # DDTB114TU-7-F
Description TRANS PREBIAS PNP 200MW SOT323
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 5,760
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DDTB114TU-7-F Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDDTB114TU-7-F
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
DDTB114TU-7-F, DDTB114TU-7-F Datasheet (Total Pages: 3, Size: 109.74 KB)
PDFDDTB143EU-7-F Datasheet Cover
DDTB143EU-7-F Datasheet Page 2 DDTB143EU-7-F Datasheet Page 3

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DDTB114TU-7-F Datasheet
  • where to find DDTB114TU-7-F
  • Diodes Incorporated

  • Diodes Incorporated DDTB114TU-7-F
  • DDTB114TU-7-F PDF Datasheet
  • DDTB114TU-7-F Stock

  • DDTB114TU-7-F Pinout
  • Datasheet DDTB114TU-7-F
  • DDTB114TU-7-F Supplier

  • Diodes Incorporated Distributor
  • DDTB114TU-7-F Price
  • DDTB114TU-7-F Distributor

DDTB114TU-7-F Specifications

ManufacturerDiodes Incorporated
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA (ICBO)
Frequency - Transition200MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSOT-323

The Products You May Be Interested In

BCR 114L3 E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

160MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Supplier Device Package

PG-TSLP-3-4

BCR148WH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

100MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

PG-SOT323-3

DDTB122TC-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

220 Ohms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

RN2303(TE85L,F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

22 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

200MHz

Power - Max

100mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

USM

RN1104CT(TPL3)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

50mA

Voltage - Collector Emitter Breakdown (Max)

20V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

50mW

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Supplier Device Package

CST3

Recently Sold

74279221111

74279221111

Wurth Electronics

FERRITE BEAD 110 OHM 1206 1LN

2N6433

2N6433

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

MT48LC4M16A2P-75 IT:G

MT48LC4M16A2P-75 IT:G

Micron Technology Inc.

IC DRAM 64M PARALLEL 54TSOP

IS66WVE4M16EALL-70BLI

IS66WVE4M16EALL-70BLI

ISSI, Integrated Silicon Solution Inc

IC PSRAM 64M PARALLEL 48TFBGA

MAX17043G+T

MAX17043G+T

Maxim Integrated

IC 2-WIRE FG MODEL GAUGE LO BATT

UUX1E470MCL1GS

UUX1E470MCL1GS

Nichicon

CAP ALUM 47UF 20% 25V SMD

IRFU9024NPBF

IRFU9024NPBF

Infineon Technologies

MOSFET P-CH 55V 11A I-PAK

LTC4365IDDB#TRMPBF

LTC4365IDDB#TRMPBF

Linear Technology/Analog Devices

IC OVERVOLTAGE PROTECT 8-DFN

AD9765ASTZ

AD9765ASTZ

Analog Devices

IC DAC 12BIT A-OUT 48LQFP

ATMEGA48PA-AU

ATMEGA48PA-AU

Microchip Technology

IC MCU 8BIT 4KB FLASH 32TQFP

AT28C16-15PC

AT28C16-15PC

Microchip Technology

IC EEPROM 16K PARALLEL 24DIP

CDSU4148

CDSU4148

Comchip Technology

DIODE GEN PURP 75V 150MA 0603