CYD09S18V18-200BBXC
For Reference Only
| Part Number | CYD09S18V18-200BBXC | ||||||||||||||||||
| PNEDA Part # | CYD09S18V18-200BBXC | ||||||||||||||||||
| Description | IC SRAM 9M PARALLEL 256FBGA | ||||||||||||||||||
| Manufacturer | Cypress Semiconductor | ||||||||||||||||||
| Unit Price |
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| In Stock | 5,568 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Mar 23 - Mar 28 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CYD09S18V18-200BBXC Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | CYD09S18V18-200BBXC |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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CYD09S18V18-200BBXC Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | - |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Synchronous |
| Memory Size | 9Mb (512K x 18) |
| Memory Interface | Parallel |
| Clock Frequency | 200MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 3.3ns |
| Voltage - Supply | 1.42V ~ 1.58V, 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 256-LBGA |
| Supplier Device Package | 256-FBGA (17x17) |
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Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile Memory Size 256Mb (16M x 16) Memory Interface Parallel Clock Frequency 133MHz Write Cycle Time - Word, Page - Access Time 6ns Voltage - Supply 2.3V ~ 3V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 54-TFBGA Supplier Device Package 54-TFBGA (8x8) |
