CY7C1643KV18-400BZXC
For Reference Only
| Part Number | CY7C1643KV18-400BZXC |
| PNEDA Part # | CY7C1643KV18-400BZXC |
| Description | IC SRAM 144M PARALLEL 165FBGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,912 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CY7C1643KV18-400BZXC Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | CY7C1643KV18-400BZXC |
| Category | Semiconductors › Memory ICs › Memory |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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CY7C1643KV18-400BZXC Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | - |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, QDR II+ |
| Memory Size | 144Mb (8M x 18) |
| Memory Interface | Parallel |
| Clock Frequency | 400MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-LBGA |
| Supplier Device Package | 165-FBGA (15x17) |
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Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology DRAM Memory Size 288Mb (8M x 36) Memory Interface Parallel Clock Frequency 400MHz Write Cycle Time - Word, Page - Access Time 20ns Voltage - Supply 1.7V ~ 1.9V Operating Temperature 0°C ~ 95°C (TC) Mounting Type Surface Mount Package / Case 144-TFBGA Supplier Device Package 144-µBGA (18.5x11) |
