CY7C1314CV18-200BZC
For Reference Only
| Part Number | CY7C1314CV18-200BZC |
| PNEDA Part # | CY7C1314CV18-200BZC |
| Description | IC SRAM 18M PARALLEL 165FBGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,068 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CY7C1314CV18-200BZC Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | CY7C1314CV18-200BZC |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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CY7C1314CV18-200BZC Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | - |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, QDR II |
| Memory Size | 18Mb (512K x 36) |
| Memory Interface | Parallel |
| Clock Frequency | 200MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-LBGA |
| Supplier Device Package | 165-FBGA (13x15) |
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Manufacturer Alliance Memory, Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR2 Memory Size 4Gb (128M x 32) Memory Interface Parallel Clock Frequency 533MHz Write Cycle Time - Word, Page 15ns Access Time - Voltage - Supply 1.14V ~ 1.95V Operating Temperature -40°C ~ 85°C (TC) Mounting Type Surface Mount Package / Case 134-VFBGA Supplier Device Package 134-FBGA (10x11.5) |
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Manufacturer Microchip Technology Series - Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 64Kb (8K x 8) Memory Interface SPI Clock Frequency 10MHz Write Cycle Time - Word, Page 5ms Access Time - Voltage - Supply 1.8V ~ 5.5V Operating Temperature -40°C ~ 125°C (TA) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Dual Port, Asynchronous Memory Size 8Kb (1K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 25ns Access Time 25ns Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 64-LQFP Supplier Device Package 64-TQFP (10x10) |
