CY14B104NA-BA45XE
For Reference Only
| Part Number | CY14B104NA-BA45XE | ||||||||||||||||||
| PNEDA Part # | CY14B104NA-BA45XE | ||||||||||||||||||
| Description | IC NVSRAM 4M PARALLEL | ||||||||||||||||||
| Manufacturer | Cypress Semiconductor | ||||||||||||||||||
| Unit Price |
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| In Stock | 234 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CY14B104NA-BA45XE Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | CY14B104NA-BA45XE |
| Category | Semiconductors › Memory ICs › Memory |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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CY14B104NA-BA45XE Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 4Mb (256K x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 45ns |
| Access Time | 45ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-FBGA (6x10) |
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Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 512Mb (16M x 32) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 5.4ns Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 90-TFBGA Supplier Device Package 90-TFBGA (8x13) |
