CY14B104NA-BA25XI
For Reference Only
| Part Number | CY14B104NA-BA25XI |
| PNEDA Part # | CY14B104NA-BA25XI |
| Description | IC NVSRAM 4M PARALLEL 48FBGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,154 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CY14B104NA-BA25XI Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | CY14B104NA-BA25XI |
| Category | Semiconductors › Memory ICs › Memory |
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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CY14B104NA-BA25XI Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 4Mb (256K x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-FBGA (6x10) |
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Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Dual Port, Asynchronous Memory Size 16Kb (2K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 55ns Access Time 55ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 64-LQFP Supplier Device Package 64-TQFP (14x14) |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile Memory Size 256Mb (8M x 32) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 5.5ns Voltage - Supply 1.7V ~ 1.95V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 90-TFBGA Supplier Device Package 90-TFBGA (8x13) |
