CY14B104NA-BA25I
For Reference Only
| Part Number | CY14B104NA-BA25I |
| PNEDA Part # | CY14B104NA-BA25I |
| Description | IC NVSRAM 4M PARALLEL 48FBGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,768 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CY14B104NA-BA25I Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | CY14B104NA-BA25I |
| Category | Semiconductors › Memory ICs › Memory |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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CY14B104NA-BA25I Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 4Mb (256K x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-FBGA (6x10) |
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Manufacturer Cypress Semiconductor Corp Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 1Mb (64K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 10ns Access Time 10ns Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 44-TSOP (0.400", 10.16mm Width) Supplier Device Package 44-TSOP II |
Manufacturer Micron Technology Inc. Series - Memory Type Non-Volatile Memory Format FLASH, RAM Technology FLASH - NAND, DRAM - LPDDR2 Memory Size 4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2) Memory Interface Parallel Clock Frequency 533MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 1.8V Operating Temperature -25°C ~ 85°C (TA) Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Microchip Technology Series - Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 512Kb (64K x 8) Memory Interface I²C Clock Frequency 1MHz Write Cycle Time - Word, Page 5ms Access Time 550ns Voltage - Supply 2.5V ~ 5.5V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 18Mb (512K x 36) Memory Interface Parallel Clock Frequency 250MHz Write Cycle Time - Word, Page - Access Time 2.6ns Voltage - Supply 2.375V ~ 2.625V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 165-TBGA Supplier Device Package 165-TFBGA (13x15) |
