CY14B104N-BA45XC
For Reference Only
| Part Number | CY14B104N-BA45XC | ||||||||||||||||||
| PNEDA Part # | CY14B104N-BA45XC | ||||||||||||||||||
| Description | IC NVSRAM 4M PARALLEL 48FBGA | ||||||||||||||||||
| Manufacturer | Cypress Semiconductor | ||||||||||||||||||
| Unit Price |
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| In Stock | 1,645 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CY14B104N-BA45XC Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | CY14B104N-BA45XC |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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CY14B104N-BA45XC Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 4Mb (256K x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 45ns |
| Access Time | 45ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-FBGA (6x10) |
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Manufacturer Cypress Semiconductor Corp Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 4Mb (256K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 10ns Access Time 10ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 44-TSOP (0.400", 10.16mm Width) Supplier Device Package 44-TSOP II |
Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 4Mb (512K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 10ns Access Time 10ns Voltage - Supply 3V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 36-BSOJ (0.400", 10.16mm Width) Supplier Device Package 36-SOJ |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 2Mb (256K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 10ns Access Time 10ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 36-BSOJ (0.400", 10.16mm Width) Supplier Device Package 36-SOJ |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR Memory Size 256Mb (16M x 16) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page 15ns Access Time 5.5ns Voltage - Supply 1.7V ~ 1.95V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 60-TFBGA Supplier Device Package 60-TFBGA (8x10) |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 8Mb (512K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 45ns Access Time 45ns Voltage - Supply 2.2V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 48-VFBGA Supplier Device Package 48-VFBGA (6x8) |
