CUHS20S30,H3F
For Reference Only
| Part Number | CUHS20S30,H3F |
| PNEDA Part # | CUHS20S30-H3F |
| Description | SCHOTTKY BARRIER DIODE, LOW VF, |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 26,478 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 28 - Dec 3 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CUHS20S30 Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | CUHS20S30,H3F |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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CUHS20S30 Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 410mV @ 2A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 500µA @ 30V |
| Capacitance @ Vr, F | 390pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | 2-SMD, Flat Lead |
| Supplier Device Package | US2H |
| Operating Temperature - Junction | 150°C (Max) |
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