CSD19538Q3AT
For Reference Only
| Part Number | CSD19538Q3AT |
| PNEDA Part # | CSD19538Q3AT |
| Description | MOSFET N-CH 100V 15A VSONP |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 270,756 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CSD19538Q3AT Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD19538Q3AT |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD19538Q3AT Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 454pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 23W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSONP (3x3.15) |
| Package / Case | 8-PowerVDFN |
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 62A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 52mOhm @ 31A, 10V Vgs(th) (Max) @ Id 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 5940pF @ 25V FET Feature - Power Dissipation (Max) 780W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
