CSD19538Q2T
For Reference Only
| Part Number | CSD19538Q2T |
| PNEDA Part # | CSD19538Q2T |
| Description | MOSFET NCH 100V 13.1A 6WSON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 23,892 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 8 - Apr 13 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CSD19538Q2T Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD19538Q2T |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD19538Q2T Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 13.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 454pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 20.2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-WSON (2x2) |
| Package / Case | 6-WDFN Exposed Pad |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 100mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
