CSD17581Q3A
For Reference Only
| Part Number | CSD17581Q3A |
| PNEDA Part # | CSD17581Q3A |
| Description | 30V N CH MOSFET |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 51,378 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CSD17581Q3A Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD17581Q3A |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD17581Q3A Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 1.7V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3640pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 63W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSONP (3x3.15) |
| Package / Case | 8-PowerVDFN |
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Manufacturer Vishay Siliconix Series TrenchFET® Gen III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4980pF @ 15V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 9.7mOhm @ 37.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V FET Feature - Power Dissipation (Max) 1W (Ta), 138W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSON Package / Case 8-SMD, Flat Lead Exposed Pad |
Manufacturer Sanken Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 13.6mOhm @ 22.8A, 10V Vgs(th) (Max) @ Id 2.5V @ 650µA Gate Charge (Qg) (Max) @ Vgs 36.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2520pF @ 25V FET Feature - Power Dissipation (Max) 90W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
