CSD17578Q5A
For Reference Only
| Part Number | CSD17578Q5A |
| PNEDA Part # | CSD17578Q5A |
| Description | MOSFET N-CH 30V 25A 8VSON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 2,070 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 31 - Apr 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CSD17578Q5A Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD17578Q5A |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD17578Q5A Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 1.9V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22.3nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 42W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSONP (5x6) |
| Package / Case | 8-PowerTDFN |
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSVI FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 103mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V Vgs (Max) +6V, -8V Input Capacitance (Ciss) (Max) @ Vds 270pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package UFM Package / Case 3-SMD, Flat Leads |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V FET Feature - Power Dissipation (Max) 2.23W (Ta), 40W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FM Package / Case TO-220-3 Full Pack |
Manufacturer ON Semiconductor Series QFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 451mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 295pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 28W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
