CSD17576Q5BT
For Reference Only
| Part Number | CSD17576Q5BT |
| PNEDA Part # | CSD17576Q5BT |
| Description | MOSFET N-CH 30V 100A 8VSON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 8,172 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CSD17576Q5BT Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD17576Q5BT |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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CSD17576Q5BT Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4430pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSONP (5x6) |
| Package / Case | 8-PowerTDFN |
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1Ohm @ 3.3A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V FET Feature - Power Dissipation (Max) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Toshiba Semiconductor and Storage Series U-MOSVI FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 45A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V Vgs (Max) +20V, -25V Input Capacitance (Ciss) (Max) @ Vds 7420pF @ 10V FET Feature - Power Dissipation (Max) 1.6W (Ta), 45W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Advance (5x5) Package / Case 8-PowerVDFN |
Manufacturer IXYS Integrated Circuits Division Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 350V Current - Continuous Drain (Id) @ 25°C 5mA (Ta) Drive Voltage (Max Rds On, Min Rds On) -0.35V Rds On (Max) @ Id, Vgs 14Ohm @ 50mA, 350mV Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature Depletion Mode Power Dissipation (Max) 2.5W (Ta) Operating Temperature -40°C ~ 110°C (TA) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
