CSD16322Q5
For Reference Only
| Part Number | CSD16322Q5 |
| PNEDA Part # | CSD16322Q5 |
| Description | MOSFET N-CH 25V 5X6 8SON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 22,038 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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CSD16322Q5 Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD16322Q5 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD16322Q5 Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 97A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 8V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.7nC @ 4.5V |
| Vgs (Max) | +10V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1365pF @ 12.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (5x6) |
| Package / Case | 8-PowerTDFN |
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 15A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4610pF @ 30V FET Feature - Power Dissipation (Max) 2.3W (Ta), 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN (5x6) Package / Case 8-PowerSMD, Flat Leads |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 850mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack, Isolated Tab |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 52.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 21mOhm @ 26.2A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V FET Feature - Power Dissipation (Max) 121W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
