CDBJFSC10650-G
For Reference Only
| Part Number | CDBJFSC10650-G |
| PNEDA Part # | CDBJFSC10650-G |
| Description | DIODE SILICON CARBIDE POWER SCHO |
| Manufacturer | Comchip Technology |
| Unit Price | Request a Quote |
| In Stock | 14,160 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CDBJFSC10650-G Resources
| Brand | Comchip Technology |
| ECAD Module |
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| Mfr. Part Number | CDBJFSC10650-G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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CDBJFSC10650-G Specifications
| Manufacturer | Comchip Technology |
| Series | - |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Current - Average Rectified (Io) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 100µA @ 650V |
| Capacitance @ Vr, F | 710pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 Full Pack |
| Supplier Device Package | TO-220F |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 1.5A Voltage - Forward (Vf) (Max) @ If 1.3V @ 1.5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 150ns Current - Reverse Leakage @ Vr 5µA @ 50V Capacitance @ Vr, F 20pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-214AA, SMB Supplier Device Package DO-214AA (SMB) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.05V @ 10A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer ON Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 15A Voltage - Forward (Vf) (Max) @ If 510mV @ 15A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 320µA @ 50V Capacitance @ Vr, F 824pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277-3 Operating Temperature - Junction -55°C ~ 155°C |
