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C1-28Z

C1-28Z

For Reference Only

Part Number C1-28Z
PNEDA Part # C1-28Z
Description RF POWER TRANSISTOR
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 8,748
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

C1-28Z Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberC1-28Z
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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C1-28Z Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

6GHz

Noise Figure (dB Typ @ f)

1.9dB ~ 3dB @ 1GHz ~ 2GHz

Gain

-

Power - Max

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 30mA, 5V

Current - Collector (Ic) (Max)

35mA

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

TO-236AB (SOT23)

TAN350

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

65V

Frequency - Transition

960MHz ~ 1.215GHz

Noise Figure (dB Typ @ f)

-

Gain

7dB ~ 7.5dB

Power - Max

1450W

DC Current Gain (hFE) (Min) @ Ic, Vce

10 @ 1A, 5V

Current - Collector (Ic) (Max)

40A

Operating Temperature

230°C (TJ)

Mounting Type

Chassis Mount

Package / Case

55ST

Supplier Device Package

55ST

CM4957

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

Transistor Type

PNP

Voltage - Collector Emitter Breakdown (Max)

25V

Frequency - Transition

2.5GHz

Noise Figure (dB Typ @ f)

-

Gain

25dB

Power - Max

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 2mA, 10V

Current - Collector (Ic) (Max)

30mA

Operating Temperature

-65°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-206AF, TO-72-4 Metal Can

Supplier Device Package

TO-72

BFU730LXZ

NXP

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

3V

Frequency - Transition

53GHz

Noise Figure (dB Typ @ f)

0.75dB @ 6GHz

Gain

15.8dB

Power - Max

160mW

DC Current Gain (hFE) (Min) @ Ic, Vce

205 @ 2mA, 3V

Current - Collector (Ic) (Max)

30mA

Operating Temperature

-

Mounting Type

Surface Mount

Package / Case

3-XFDFN

Supplier Device Package

3-DFN1006 (1.0x0.6)

AT-41586-BLKG

Broadcom

Manufacturer

Broadcom Limited

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

8GHz

Noise Figure (dB Typ @ f)

1.4dB ~ 3dB @ 1GHz ~ 4GHz

Gain

8dB ~ 17dB

Power - Max

500mW

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 8V

Current - Collector (Ic) (Max)

60mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-86

Supplier Device Package

86 Plastic

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