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C1-28Z

C1-28Z

For Reference Only

Part Number C1-28Z
PNEDA Part # C1-28Z
Description RF POWER TRANSISTOR
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 8,748
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 15 - Mar 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

C1-28Z Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberC1-28Z
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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C1-28Z Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

The Products You May Be Interested In

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

960MHz ~ 1.215GHz

Noise Figure (dB Typ @ f)

-

Gain

7dB ~ 7.5dB

Power - Max

1450W

DC Current Gain (hFE) (Min) @ Ic, Vce

10 @ 1A, 5V

Current - Collector (Ic) (Max)

40A

Operating Temperature

230°C (TJ)

Mounting Type

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Supplier Device Package

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

1.9dB ~ 3dB @ 1GHz ~ 2GHz

Gain

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Power - Max

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 30mA, 5V

Current - Collector (Ic) (Max)

35mA

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

TO-236AB (SOT23)

AT-41586-BLKG

Broadcom

Manufacturer

Broadcom Limited

Series

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Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

8GHz

Noise Figure (dB Typ @ f)

1.4dB ~ 3dB @ 1GHz ~ 4GHz

Gain

8dB ~ 17dB

Power - Max

500mW

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 8V

Current - Collector (Ic) (Max)

60mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-86

Supplier Device Package

86 Plastic

Manufacturer

NXP USA Inc.

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

75V

Frequency - Transition

3.5GHz

Noise Figure (dB Typ @ f)

-

Gain

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Power - Max

34W

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 250mA, 5V

Current - Collector (Ic) (Max)

1.5A

Operating Temperature

200°C (TJ)

Mounting Type

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Package / Case

SOT-445C

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Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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