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BYWB29-200HE3/45

BYWB29-200HE3/45

For Reference Only

Part Number BYWB29-200HE3/45
PNEDA Part # BYWB29-200HE3-45
Description DIODE GEN PURP 200V 8A TO263AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 5,310
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BYWB29-200HE3/45 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberBYWB29-200HE3/45
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
BYWB29-200HE3/45, BYWB29-200HE3/45 Datasheet (Total Pages: 5, Size: 139.76 KB)
PDFBYW29-100801HE3/45 Datasheet Cover
BYW29-100801HE3/45 Datasheet Page 2 BYW29-100801HE3/45 Datasheet Page 3 BYW29-100801HE3/45 Datasheet Page 4 BYW29-100801HE3/45 Datasheet Page 5

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BYWB29-200HE3/45 Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.3V @ 20A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)25ns
Current - Reverse Leakage @ Vr10µA @ 200V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB
Operating Temperature - Junction-65°C ~ 150°C

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