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BYM11-800HE3_A/I

BYM11-800HE3_A/I

For Reference Only

Part Number BYM11-800HE3_A/I
PNEDA Part # BYM11-800HE3_A-I
Description DIODE GEN PURP 800V 1A DO213AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 6,300
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BYM11-800HE3_A/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberBYM11-800HE3_A/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
BYM11-800HE3_A/I, BYM11-800HE3_A/I Datasheet (Total Pages: 4, Size: 79.46 KB)
PDFRGL41MHE3/96 Datasheet Cover
RGL41MHE3/96 Datasheet Page 2 RGL41MHE3/96 Datasheet Page 3 RGL41MHE3/96 Datasheet Page 4

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BYM11-800HE3_A/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101, Superectifier®
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)800V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.3V @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)500ns
Current - Reverse Leakage @ Vr5µA @ 800V
Capacitance @ Vr, F15pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-213AB, MELF (Glass)
Supplier Device PackageDO-213AB
Operating Temperature - Junction-65°C ~ 175°C

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