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BYM07-50HE3_A/I

BYM07-50HE3_A/I

For Reference Only

Part Number BYM07-50HE3_A/I
PNEDA Part # BYM07-50HE3_A-I
Description DIODE GEN PURP 50V 500MA DO213AA
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 5,760
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BYM07-50HE3_A/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberBYM07-50HE3_A/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
BYM07-50HE3_A/I, BYM07-50HE3_A/I Datasheet (Total Pages: 4, Size: 79.9 KB)
PDFBYM07-150HE3/83 Datasheet Cover
BYM07-150HE3/83 Datasheet Page 2 BYM07-150HE3/83 Datasheet Page 3 BYM07-150HE3/83 Datasheet Page 4

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BYM07-50HE3_A/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101, Superectifier®
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)50V
Current - Average Rectified (Io)500mA
Voltage - Forward (Vf) (Max) @ If1.25V @ 500mA
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)50ns
Current - Reverse Leakage @ Vr5µA @ 50V
Capacitance @ Vr, F7pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-213AA (Glass)
Supplier Device PackageDO-213AA (GL34)
Operating Temperature - Junction-65°C ~ 175°C

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Current - Reverse Leakage @ Vr

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Reverse Recovery Time (trr)

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Voltage - DC Reverse (Vr) (Max)

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Diode Type

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Voltage - DC Reverse (Vr) (Max)

300V

Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

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Current - Reverse Leakage @ Vr

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Reverse Recovery Time (trr)

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Current - Reverse Leakage @ Vr

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Operating Temperature - Junction

-40°C ~ 150°C

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