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BYG23T-M3/TR

BYG23T-M3/TR

For Reference Only

Part Number BYG23T-M3/TR
PNEDA Part # BYG23T-M3-TR
Description DIODE AVALANCHE 1300V 1A DO214AC
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 1,502,286
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BYG23T-M3/TR Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberBYG23T-M3/TR
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
BYG23T-M3/TR, BYG23T-M3/TR Datasheet (Total Pages: 5, Size: 83.18 KB)
PDFBYG23T-M3/TR3 Datasheet Cover
BYG23T-M3/TR3 Datasheet Page 2 BYG23T-M3/TR3 Datasheet Page 3 BYG23T-M3/TR3 Datasheet Page 4 BYG23T-M3/TR3 Datasheet Page 5

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BYG23T-M3/TR Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeAvalanche
Voltage - DC Reverse (Vr) (Max)1300V
Current - Average Rectified (Io)1A (DC)
Voltage - Forward (Vf) (Max) @ If1.9V @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)75ns
Current - Reverse Leakage @ Vr5µA @ 1300V
Capacitance @ Vr, F9pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C

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