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BYG22BHE3_A/H

BYG22BHE3_A/H

For Reference Only

Part Number BYG22BHE3_A/H
PNEDA Part # BYG22BHE3_A-H
Description DIODE AVALANCHE 100V 2A DO214AC
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 8,298
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BYG22BHE3_A/H Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberBYG22BHE3_A/H
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
BYG22BHE3_A/H, BYG22BHE3_A/H Datasheet (Total Pages: 5, Size: 92.21 KB)
PDFBYG22DHE3/TR Datasheet Cover
BYG22DHE3/TR Datasheet Page 2 BYG22DHE3/TR Datasheet Page 3 BYG22DHE3/TR Datasheet Page 4 BYG22DHE3/TR Datasheet Page 5

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BYG22BHE3_A/H Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeAvalanche
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)2A
Voltage - Forward (Vf) (Max) @ If1.1V @ 2A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)25ns
Current - Reverse Leakage @ Vr1µA @ 100V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C

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Voltage - DC Reverse (Vr) (Max)

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Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

3A

Voltage - Forward (Vf) (Max) @ If

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Speed

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Speed

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Package / Case

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Supplier Device Package

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Operating Temperature - Junction

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