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BUZ32H3045AATMA1

BUZ32H3045AATMA1

For Reference Only

Part Number BUZ32H3045AATMA1
PNEDA Part # BUZ32H3045AATMA1
Description MOSFET N-CH 200V 9.5A TO-263
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,716
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUZ32H3045AATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBUZ32H3045AATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUZ32H3045AATMA1, BUZ32H3045AATMA1 Datasheet (Total Pages: 10, Size: 1,225.42 KB)
PDFBUZ32H3045AATMA1 Datasheet Cover
BUZ32H3045AATMA1 Datasheet Page 2 BUZ32H3045AATMA1 Datasheet Page 3 BUZ32H3045AATMA1 Datasheet Page 4 BUZ32H3045AATMA1 Datasheet Page 5 BUZ32H3045AATMA1 Datasheet Page 6 BUZ32H3045AATMA1 Datasheet Page 7 BUZ32H3045AATMA1 Datasheet Page 8 BUZ32H3045AATMA1 Datasheet Page 9 BUZ32H3045AATMA1 Datasheet Page 10

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BUZ32H3045AATMA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds530pF @ 25V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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