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BUZ31H3046XKSA1

BUZ31H3046XKSA1

For Reference Only

Part Number BUZ31H3046XKSA1
PNEDA Part # BUZ31H3046XKSA1
Description MOSFET N-CH 200V 14.5A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,860
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUZ31H3046XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBUZ31H3046XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUZ31H3046XKSA1, BUZ31H3046XKSA1 Datasheet (Total Pages: 10, Size: 796.03 KB)
PDFBUZ31H3046XKSA1 Datasheet Cover
BUZ31H3046XKSA1 Datasheet Page 2 BUZ31H3046XKSA1 Datasheet Page 3 BUZ31H3046XKSA1 Datasheet Page 4 BUZ31H3046XKSA1 Datasheet Page 5 BUZ31H3046XKSA1 Datasheet Page 6 BUZ31H3046XKSA1 Datasheet Page 7 BUZ31H3046XKSA1 Datasheet Page 8 BUZ31H3046XKSA1 Datasheet Page 9 BUZ31H3046XKSA1 Datasheet Page 10

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BUZ31H3046XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs200mOhm @ 9A, 5V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1120pF @ 25V
FET Feature-
Power Dissipation (Max)95W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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