Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BUK9Y19-100E,115

BUK9Y19-100E,115

For Reference Only

Part Number BUK9Y19-100E,115
PNEDA Part # BUK9Y19-100E-115
Description MOSFET N-CH 100V 56A LFPAK
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 78,636
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK9Y19-100E Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberBUK9Y19-100E,115
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUK9Y19-100E, BUK9Y19-100E Datasheet (Total Pages: 13, Size: 741.72 KB)
PDFBUK9Y19-100E Datasheet Cover
BUK9Y19-100E Datasheet Page 2 BUK9Y19-100E Datasheet Page 3 BUK9Y19-100E Datasheet Page 4 BUK9Y19-100E Datasheet Page 5 BUK9Y19-100E Datasheet Page 6 BUK9Y19-100E Datasheet Page 7 BUK9Y19-100E Datasheet Page 8 BUK9Y19-100E Datasheet Page 9 BUK9Y19-100E Datasheet Page 10 BUK9Y19-100E Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BUK9Y19-100E,115 Datasheet
  • where to find BUK9Y19-100E,115
  • Nexperia

  • Nexperia BUK9Y19-100E,115
  • BUK9Y19-100E,115 PDF Datasheet
  • BUK9Y19-100E,115 Stock

  • BUK9Y19-100E,115 Pinout
  • Datasheet BUK9Y19-100E,115
  • BUK9Y19-100E,115 Supplier

  • Nexperia Distributor
  • BUK9Y19-100E,115 Price
  • BUK9Y19-100E,115 Distributor

BUK9Y19-100E Specifications

ManufacturerNexperia USA Inc.
SeriesAutomotive, AEC-Q101, TrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs18mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs39nC @ 5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds5085pF @ 25V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSC-100, SOT-669

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

21.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1815pF @ 25V

FET Feature

-

Power Dissipation (Max)

105W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

DMN10H220LK3-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SI3493BDV-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

27.5mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43.5nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1805pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.08W (Ta), 2.97W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

NTD12N10-1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

165mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

550pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.28W (Ta), 56.6W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

BUK7509-75A,127

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6760pF @ 25V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

MAX3486ESA+T

MAX3486ESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SOIC

8121-RC

8121-RC

Bourns

COMMON MODE CHOKE 1MH 20A 2LN TH

N25Q256A13ESF40G

N25Q256A13ESF40G

Micron Technology Inc.

IC FLASH 256M SPI 108MHZ 16SOP2

LIS35DE

LIS35DE

STMicroelectronics

ACCEL 2.3-9.2G I2C/SPI 14LGA

TZMC15-GS08

TZMC15-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 15V 500MW SOD80

SMBJ40A

SMBJ40A

Bourns

TVS DIODE 40V 64.5V SMB

USB4604-1080HN

USB4604-1080HN

Microchip Technology

IC USB HUB/FLASH CTLR 48QFN

MAX881REUB+

MAX881REUB+

Maxim Integrated

IC REG CHARGE PUMP 1OUT 10UMAX

BC848BLT3G

BC848BLT3G

ON Semiconductor

TRANS NPN 30V 0.1A SOT-23

TAJA226M010RNJ

TAJA226M010RNJ

CAP TANT 22UF 20% 10V 1206

L6374FP

L6374FP

STMicroelectronics

IC LINE DRIVER QUAD IND 20-SOIC

NL17SZ14DFT2G

NL17SZ14DFT2G

ON Semiconductor

IC INVERTER SCHMITT 1CH SC88A