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BUK961R4-30E,118

BUK961R4-30E,118

For Reference Only

Part Number BUK961R4-30E,118
PNEDA Part # BUK961R4-30E-118
Description MOSFET N-CH 30V 120A D2PAK
Manufacturer NXP
Unit Price Request a Quote
In Stock 3,438
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK961R4-30E Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberBUK961R4-30E,118
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUK961R4-30E, BUK961R4-30E Datasheet (Total Pages: 15, Size: 514.71 KB)
PDFBUK961R4-30E Datasheet Cover
BUK961R4-30E Datasheet Page 2 BUK961R4-30E Datasheet Page 3 BUK961R4-30E Datasheet Page 4 BUK961R4-30E Datasheet Page 5 BUK961R4-30E Datasheet Page 6 BUK961R4-30E Datasheet Page 7 BUK961R4-30E Datasheet Page 8 BUK961R4-30E Datasheet Page 9 BUK961R4-30E Datasheet Page 10 BUK961R4-30E Datasheet Page 11

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BUK961R4-30E Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs1.4mOhm @ 25A, 5V
Vgs(th) (Max) @ Id2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs113nC @ 5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds16150pF @ 25V
FET Feature-
Power Dissipation (Max)357W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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