BUK951R6-30E,127
For Reference Only
| Part Number | BUK951R6-30E,127 |
| PNEDA Part # | BUK951R6-30E-127 |
| Description | MOSFET N-CH 30V 120A TO220AB |
| Manufacturer | NXP |
| Unit Price | Request a Quote |
| In Stock | 6,192 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BUK951R6-30E Resources
| Brand | NXP |
| ECAD Module |
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| Mfr. Part Number | BUK951R6-30E,127 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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BUK951R6-30E Specifications
| Manufacturer | NXP USA Inc. |
| Series | TrenchMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 113nC @ 5V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 16150pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 90V Current - Continuous Drain (Id) @ 25°C 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V FET Feature - Power Dissipation (Max) 725mW (Ta), 6.25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-39 Package / Case TO-205AD, TO-39-3 Metal Can |
