Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BUK7Y12-55B,115

BUK7Y12-55B,115

For Reference Only

Part Number BUK7Y12-55B,115
PNEDA Part # BUK7Y12-55B-115
Description MOSFET N-CH 55V 61.8A LFPAK
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 127,404
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 23 - Apr 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK7Y12-55B Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberBUK7Y12-55B,115
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUK7Y12-55B, BUK7Y12-55B Datasheet (Total Pages: 14, Size: 790.19 KB)
PDFBUK7Y12-55B Datasheet Cover
BUK7Y12-55B Datasheet Page 2 BUK7Y12-55B Datasheet Page 3 BUK7Y12-55B Datasheet Page 4 BUK7Y12-55B Datasheet Page 5 BUK7Y12-55B Datasheet Page 6 BUK7Y12-55B Datasheet Page 7 BUK7Y12-55B Datasheet Page 8 BUK7Y12-55B Datasheet Page 9 BUK7Y12-55B Datasheet Page 10 BUK7Y12-55B Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BUK7Y12-55B,115 Datasheet
  • where to find BUK7Y12-55B,115
  • Nexperia

  • Nexperia BUK7Y12-55B,115
  • BUK7Y12-55B,115 PDF Datasheet
  • BUK7Y12-55B,115 Stock

  • BUK7Y12-55B,115 Pinout
  • Datasheet BUK7Y12-55B,115
  • BUK7Y12-55B,115 Supplier

  • Nexperia Distributor
  • BUK7Y12-55B,115 Price
  • BUK7Y12-55B,115 Distributor

BUK7Y12-55B Specifications

ManufacturerNexperia USA Inc.
SeriesAutomotive, AEC-Q101, TrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C61.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs35.2nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2067pF @ 25V
FET Feature-
Power Dissipation (Max)105W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSC-100, SOT-669

The Products You May Be Interested In

STW21NM60ND

STMicroelectronics

Manufacturer

STMicroelectronics

Series

FDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

220mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 50V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

FDP8N50NZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

850mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

735pF @ 25V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IPD60R1K0CEATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CE

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 130µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

280pF @ 100V

FET Feature

-

Power Dissipation (Max)

37W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IXFA7N80P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.44Ohm @ 3.5A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1890pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXFA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6212pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

CDSOT23-T24CAN

CDSOT23-T24CAN

Bourns

TVS DIODE 24V 40V SOT23

TX1475NL

TX1475NL

Pulse Electronics Network

XFRMR OCTAL 1:2/1:1 1.2MH SMD

MAX333AEWP

MAX333AEWP

Maxim Integrated

IC SWITCH QUAD SPDT 20SOIC

GRM31A5C2J100JW01D

GRM31A5C2J100JW01D

Murata

CAP CER 10PF 630V C0G/NP0 1206

IS82C54

IS82C54

Renesas Electronics America Inc.

IC OSC PROG TIMER 8MHZ 28PLCC

5CEBA9F27C7N

5CEBA9F27C7N

Intel

IC FPGA 336 I/O 672FBGA

SI3420A-TP

SI3420A-TP

Micro Commercial Co

MOSFET N-CH 20V 6A SOT-23

BC81725MTF

BC81725MTF

ON Semiconductor

TRANS NPN 45V 0.8A SOT-23

MAX15027ATB/V+T

MAX15027ATB/V+T

Maxim Integrated

IC REG LINEAR POS ADJ 1A 10TDFN

LV8727-E

LV8727-E

ON Semiconductor

IC MTR DRVR BIPOLAR 0V-5V 25HZIP

E-TEA3717DP

E-TEA3717DP

STMicroelectronics

IC MOTOR DRVR BIPOLAR 16POWERDIP

BAT54CXV3T1G

BAT54CXV3T1G

ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SC89-3