BUK7E4R6-60E,127
For Reference Only
| Part Number | BUK7E4R6-60E,127 |
| PNEDA Part # | BUK7E4R6-60E-127 |
| Description | MOSFET N-CH 60V 100A I2PAK |
| Manufacturer | Nexperia |
| Unit Price | Request a Quote |
| In Stock | 42,336 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BUK7E4R6-60E Resources
| Brand | Nexperia |
| ECAD Module |
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| Mfr. Part Number | BUK7E4R6-60E,127 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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BUK7E4R6-60E Specifications
| Manufacturer | Nexperia USA Inc. |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 82nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6230pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 234W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6860pF @ 50V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
