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BUK762R6-40E/GFJ

BUK762R6-40E/GFJ

For Reference Only

Part Number BUK762R6-40E/GFJ
PNEDA Part # BUK762R6-40E-GFJ
Description MOSFET N-CH D2PAK
Manufacturer NXP
Unit Price Request a Quote
In Stock 3,636
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK762R6-40E/GFJ Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberBUK762R6-40E/GFJ
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single

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BUK762R6-40E/GFJ Specifications

ManufacturerNXP USA Inc.
Series*
Transistor Type-
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max-
Frequency - Transition-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

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Transistor Type

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Current - Collector (Ic) (Max)

150mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

200mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 1mA, 6V

Power - Max

150mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-75, SOT-416

Supplier Device Package

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2N3702_D27Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 50mA, 5V

Power - Max

625mW

Frequency - Transition

100MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2SA1312-BL(TE85L,F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

300mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

350 @ 2mA, 6V

Power - Max

150mW

Frequency - Transition

100MHz

Operating Temperature

125°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

S-Mini

2SA1428-Y,T2F(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

SC-71

Supplier Device Package

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SBC817-16LT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

Transistor Type

NPN

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

700mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 1V

Power - Max

300mW

Frequency - Transition

100MHz

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3 (TO-236)

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