BUK7108-40AIE,118
For Reference Only
| Part Number | BUK7108-40AIE,118 |
| PNEDA Part # | BUK7108-40AIE-118 |
| Description | MOSFET N-CH 40V 75A D2PAK |
| Manufacturer | Nexperia |
| Unit Price | Request a Quote |
| In Stock | 7,398 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
BUK7108-40AIE Resources
| Brand | Nexperia |
| ECAD Module |
|
| Mfr. Part Number | BUK7108-40AIE,118 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- BUK7108-40AIE,118 Datasheet
- where to find BUK7108-40AIE,118
- Nexperia
- Nexperia BUK7108-40AIE,118
- BUK7108-40AIE,118 PDF Datasheet
- BUK7108-40AIE,118 Stock
- BUK7108-40AIE,118 Pinout
- Datasheet BUK7108-40AIE,118
- BUK7108-40AIE,118 Supplier
- Nexperia Distributor
- BUK7108-40AIE,118 Price
- BUK7108-40AIE,118 Distributor
BUK7108-40AIE Specifications
| Manufacturer | Nexperia USA Inc. |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 84nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3140pF @ 25V |
| FET Feature | Current Sensing |
| Power Dissipation (Max) | 221W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-426 |
| Package / Case | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series FETKY™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 130mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 210pF @ 25V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.25W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Micro8™ Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 42mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1460pF @ 15V FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer ON Semiconductor Series UniFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.4Ohm @ 1A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 225pF @ 25V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 56A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7mOhm @ 28A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 60V FET Feature - Power Dissipation (Max) 168W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 20A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1797pF @ 25V FET Feature - Power Dissipation (Max) 2.8W (Ta), 37W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PQFN (3x3) Package / Case 8-VQFN Exposed Pad |
