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BSZ180P03NS3EGATMA1

BSZ180P03NS3EGATMA1

For Reference Only

Part Number BSZ180P03NS3EGATMA1
PNEDA Part # BSZ180P03NS3EGATMA1
Description MOSFET P-CH 30V 39.6A TSDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,780
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSZ180P03NS3EGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSZ180P03NS3EGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSZ180P03NS3EGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 39.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.1V @ 48µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2220pF @ 15V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8
Package / Case8-PowerTDFN

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