Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSZ096N10LS5ATMA1

BSZ096N10LS5ATMA1

For Reference Only

Part Number BSZ096N10LS5ATMA1
PNEDA Part # BSZ096N10LS5ATMA1
Description MV POWER MOS
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,326
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSZ096N10LS5ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSZ096N10LS5ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSZ096N10LS5ATMA1 Datasheet
  • where to find BSZ096N10LS5ATMA1
  • Infineon Technologies

  • Infineon Technologies BSZ096N10LS5ATMA1
  • BSZ096N10LS5ATMA1 PDF Datasheet
  • BSZ096N10LS5ATMA1 Stock

  • BSZ096N10LS5ATMA1 Pinout
  • Datasheet BSZ096N10LS5ATMA1
  • BSZ096N10LS5ATMA1 Supplier

  • Infineon Technologies Distributor
  • BSZ096N10LS5ATMA1 Price
  • BSZ096N10LS5ATMA1 Distributor

BSZ096N10LS5ATMA1 Specifications

ManufacturerInfineon Technologies
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8-FL
Package / Case8-PowerTDFN

The Products You May Be Interested In

AON6500_001

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

71A (Ta), 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

0.95mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

145nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7036pF @ 15V

FET Feature

-

Power Dissipation (Max)

7.3W (Ta), 83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (5x6)

Package / Case

8-PowerSMD, Flat Leads

STW70N60DM6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ DM6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

62A

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

Manufacturer

IXYS

Series

Linear L2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

610nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

24000pF @ 25V

FET Feature

-

Power Dissipation (Max)

960W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264 (IXTK)

Package / Case

TO-264-3, TO-264AA

SI7196DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

WFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1577pF @ 15V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 41.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

AUIRFP4568

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

171A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.9mOhm @ 103A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

227nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

10470pF @ 50V

FET Feature

-

Power Dissipation (Max)

517W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

Recently Sold

1N5819HW-7-F

1N5819HW-7-F

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOD123

SMAJ5.0CA-13-F

SMAJ5.0CA-13-F

Diodes Incorporated

TVS DIODE 5V 9.2V SMA

TAJA105K016RNJ

TAJA105K016RNJ

CAP TANT 1UF 10% 16V 1206

T491C107K016AT

T491C107K016AT

KEMET

CAP TANT 100UF 10% 16V 2312

S14100038

S14100038

Wurth Electronics

CMC 560UH 20A 2LN TH

LTM8045IY#PBF

LTM8045IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER +/-2.5 +/-15V

SMBJ7.0CA-E3/52

SMBJ7.0CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 7V 12V DO214AA

SP3232EEN-L

SP3232EEN-L

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

FM25V02A-DG

FM25V02A-DG

Cypress Semiconductor

IC FRAM 256K SPI 40MHZ 8DFN

ADM3202ARUZ

ADM3202ARUZ

Analog Devices

IC TRANSCEIVER FULL 2/2 16TSSOP

BNX026H01L

BNX026H01L

Murata

FILTER LC 10UF SMD

SI7114DN-T1-E3

SI7114DN-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 11.7A 1212-8