Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSZ0901NSIATMA1

BSZ0901NSIATMA1

For Reference Only

Part Number BSZ0901NSIATMA1
PNEDA Part # BSZ0901NSIATMA1
Description MOSFET N-CH 30V 40A TSDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,366
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSZ0901NSIATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSZ0901NSIATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSZ0901NSIATMA1 Datasheet
  • where to find BSZ0901NSIATMA1
  • Infineon Technologies

  • Infineon Technologies BSZ0901NSIATMA1
  • BSZ0901NSIATMA1 PDF Datasheet
  • BSZ0901NSIATMA1 Stock

  • BSZ0901NSIATMA1 Pinout
  • Datasheet BSZ0901NSIATMA1
  • BSZ0901NSIATMA1 Supplier

  • Infineon Technologies Distributor
  • BSZ0901NSIATMA1 Price
  • BSZ0901NSIATMA1 Distributor

BSZ0901NSIATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C25A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 15V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)2.1W (Ta), 69W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8-FL
Package / Case8-PowerTDFN

The Products You May Be Interested In

HUFA75343G3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

205nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 25V

FET Feature

-

Power Dissipation (Max)

270W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

FQP6N90C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.3Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1770pF @ 25V

FET Feature

-

Power Dissipation (Max)

167W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

FQI5N30TU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

430pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.13W (Ta), 70W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

SIHB15N60E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 100V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SI1054X-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

95mOhm @ 1.32A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.57nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

480pF @ 6V

FET Feature

-

Power Dissipation (Max)

236mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-6

Package / Case

SOT-563, SOT-666

Recently Sold

HCTL-1101-PLC

HCTL-1101-PLC

Broadcom

IC MOTOR DRIVER BIPOLAR 44PLCC

914CE2-3

914CE2-3

Honeywell Sensing and Productivity Solutions

SWITCH SNAP ACTION SPDT 5A 240V

MCP1826-3302E/ET

MCP1826-3302E/ET

Microchip Technology

IC REG LINEAR 3.3V 1A 5DDPAK

NJM2120D

NJM2120D

NJR Corporation/NJRC

IC OPAMP GP 2 CIRCUIT 8DIP

DG641DY

DG641DY

Vishay Siliconix

IC VIDEO SWITCH SPST 16SOIC

9ZXL0831EKILF

9ZXL0831EKILF

IDT, Integrated Device Technology

DB800ZL

MAX3051ESA+T

MAX3051ESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SO

ADP1613ARMZ-R7

ADP1613ARMZ-R7

Analog Devices

IC REG BST SEPIC ADJ 2A 8MSOP

RCLAMP0502N.TCT

RCLAMP0502N.TCT

Semtech

TVS DIODE 6.5V 30V SLP1210N6

ST1S40IPUR

ST1S40IPUR

STMicroelectronics

IC REG BUCK ADJ 3A 8VFQFPN

EP3C16F484I7N

EP3C16F484I7N

Intel

IC FPGA 346 I/O 484FBGA

SI3420A-TP

SI3420A-TP

Micro Commercial Co

MOSFET N-CH 20V 6A SOT-23