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BSZ018NE2LSIATMA1

BSZ018NE2LSIATMA1

For Reference Only

Part Number BSZ018NE2LSIATMA1
PNEDA Part # BSZ018NE2LSIATMA1
Description MOSFET N-CH 25V 22A TSDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 51,660
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSZ018NE2LSIATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSZ018NE2LSIATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSZ018NE2LSIATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 12V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 69W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8-FL
Package / Case8-PowerTDFN

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