BSS84PWH6327XTSA1
For Reference Only
| Part Number | BSS84PWH6327XTSA1 |
| PNEDA Part # | BSS84PWH6327XTSA1 |
| Description | MOSFET P-CH 60V 150MA SOT-323 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 1,030,020 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BSS84PWH6327XTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BSS84PWH6327XTSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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BSS84PWH6327XTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 150mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 150mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 19.1pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 300mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT323-3 |
| Package / Case | SC-70, SOT-323 |
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V FET Feature - Power Dissipation (Max) 3W (Ta), 36W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 32A (Ta), 147A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.7mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7800pF @ 15V FET Feature - Power Dissipation (Max) 2.8W (Ta), 57W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MG-WDSON-2, CanPAK M™ Package / Case 3-WDSON |
