BSP149L6327HTSA1
For Reference Only
Part Number | BSP149L6327HTSA1 |
PNEDA Part # | BSP149L6327HTSA1 |
Description | MOSFET N-CH 200V 660MA SOT-223 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 2,412 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BSP149L6327HTSA1 Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | BSP149L6327HTSA1 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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BSP149L6327HTSA1 Specifications
Manufacturer | Infineon Technologies |
Series | SIPMOS® |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
Rds On (Max) @ Id, Vgs | 1.8Ohm @ 660mA, 10V |
Vgs(th) (Max) @ Id | 1V @ 400µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 25V |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 1.8W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4 |
Package / Case | TO-261-4, TO-261AA |
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