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BSO615CGHUMA1

BSO615CGHUMA1

For Reference Only

Part Number BSO615CGHUMA1
PNEDA Part # BSO615CGHUMA1
Description MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 50,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSO615CGHUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSO615CGHUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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BSO615CGHUMA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C3.1A, 2A
Rds On (Max) @ Id, Vgs110mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs22.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds380pF @ 25V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device PackagePG-DSO-8

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