BSO330N02KGFUMA1
For Reference Only
| Part Number | BSO330N02KGFUMA1 |
| PNEDA Part # | BSO330N02KGFUMA1 |
| Description | MOSFET 2N-CH 20V 5.4A 8DSO |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,074 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
BSO330N02KGFUMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | BSO330N02KGFUMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- BSO330N02KGFUMA1 Datasheet
- where to find BSO330N02KGFUMA1
- Infineon Technologies
- Infineon Technologies BSO330N02KGFUMA1
- BSO330N02KGFUMA1 PDF Datasheet
- BSO330N02KGFUMA1 Stock
- BSO330N02KGFUMA1 Pinout
- Datasheet BSO330N02KGFUMA1
- BSO330N02KGFUMA1 Supplier
- Infineon Technologies Distributor
- BSO330N02KGFUMA1 Price
- BSO330N02KGFUMA1 Distributor
BSO330N02KGFUMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.9nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 730pF @ 10V |
| Power - Max | 1.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | PG-DSO-8 |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.8A, 4.3A Rds On (Max) @ Id, Vgs 45mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V Power - Max 2.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Diodes Incorporated Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 220mA, 200mA Rds On (Max) @ Id, Vgs 1.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 22.6pF @ 15V Power - Max 350mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-963 Supplier Device Package SOT-963 |
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs 14.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 640pF @ 25V Power - Max 3W (Ta), 37W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerTDFN Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Dual) Common Source FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 3.4A Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 5V Vgs(th) (Max) @ Id 2.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type - Package / Case Die Supplier Device Package Die |
Manufacturer Diodes Incorporated Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
