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BSO083N03MSGXUMA1

BSO083N03MSGXUMA1

For Reference Only

Part Number BSO083N03MSGXUMA1
PNEDA Part # BSO083N03MSGXUMA1
Description MOSFET N-CH 30V 11A 8DSO
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,302
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSO083N03MSGXUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSO083N03MSGXUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSO083N03MSGXUMA1, BSO083N03MSGXUMA1 Datasheet (Total Pages: 9, Size: 672.59 KB)
PDFBSO083N03MSGXUMA1 Datasheet Cover
BSO083N03MSGXUMA1 Datasheet Page 2 BSO083N03MSGXUMA1 Datasheet Page 3 BSO083N03MSGXUMA1 Datasheet Page 4 BSO083N03MSGXUMA1 Datasheet Page 5 BSO083N03MSGXUMA1 Datasheet Page 6 BSO083N03MSGXUMA1 Datasheet Page 7 BSO083N03MSGXUMA1 Datasheet Page 8 BSO083N03MSGXUMA1 Datasheet Page 9

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BSO083N03MSGXUMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.3mOhm @ 14A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2100pF @ 15V
FET Feature-
Power Dissipation (Max)1.56W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-DSO-8
Package / Case8-SOIC (0.154", 3.90mm Width)

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