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BSM120D12P2C005

BSM120D12P2C005

For Reference Only

Part Number BSM120D12P2C005
PNEDA Part # BSM120D12P2C005
Description MOSFET 2N-CH 1200V 120A MODULE
Manufacturer Rohm Semiconductor
Unit Price
1 ---------- $4,089.9692
50 ---------- $3,898.2518
100 ---------- $3,706.5345
200 ---------- $3,514.8172
400 ---------- $3,355.0528
500 ---------- $3,195.2884
In Stock 94
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSM120D12P2C005 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberBSM120D12P2C005
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
BSM120D12P2C005, BSM120D12P2C005 Datasheet (Total Pages: 9, Size: 633.26 KB)
PDFBSM120D12P2C005 Datasheet Cover
BSM120D12P2C005 Datasheet Page 2 BSM120D12P2C005 Datasheet Page 3 BSM120D12P2C005 Datasheet Page 4 BSM120D12P2C005 Datasheet Page 5 BSM120D12P2C005 Datasheet Page 6 BSM120D12P2C005 Datasheet Page 7 BSM120D12P2C005 Datasheet Page 8 BSM120D12P2C005 Datasheet Page 9

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BSM120D12P2C005 Specifications

ManufacturerRohm Semiconductor
Series-
FET Type2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id2.7V @ 22mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds14000pF @ 10V
Power - Max780W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting Type-
Package / CaseModule
Supplier Device PackageModule

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