Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSL305SPEH6327XTSA1

BSL305SPEH6327XTSA1

For Reference Only

Part Number BSL305SPEH6327XTSA1
PNEDA Part # BSL305SPEH6327XTSA1
Description MOSFET P-CH 30V 5.3A TSOP-6
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSL305SPEH6327XTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSL305SPEH6327XTSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSL305SPEH6327XTSA1 Datasheet
  • where to find BSL305SPEH6327XTSA1
  • Infineon Technologies

  • Infineon Technologies BSL305SPEH6327XTSA1
  • BSL305SPEH6327XTSA1 PDF Datasheet
  • BSL305SPEH6327XTSA1 Stock

  • BSL305SPEH6327XTSA1 Pinout
  • Datasheet BSL305SPEH6327XTSA1
  • BSL305SPEH6327XTSA1 Supplier

  • Infineon Technologies Distributor
  • BSL305SPEH6327XTSA1 Price
  • BSL305SPEH6327XTSA1 Distributor

BSL305SPEH6327XTSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs45mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds939pF @ 15V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSOP-6-6
Package / CaseSOT-23-6 Thin, TSOT-23-6

The Products You May Be Interested In

STL28N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IRL1104SPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

104A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 62A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3445pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

TPH3R704PL,L1Q

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIX-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

92A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.7mOhm @ 46A, 10V

Vgs(th) (Max) @ Id

2.4V @ 0.2mA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 20V

FET Feature

-

Power Dissipation (Max)

960mW (Ta), 81W (Tc)

Operating Temperature

175°C

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

SUM55P06-19L-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

19mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

115nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3500pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFZ34L

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

50mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 88W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

MAMK2520T2R2M

MAMK2520T2R2M

Taiyo Yuden

FIXED IND 2.2UH 1.9A 117 MOHM

CS240610

CS240610

Powerex Inc.

DIODE GP 600V 100A POWRBLOK

AD9528BCPZ

AD9528BCPZ

Analog Devices

IC CLOCK GEN 1.25GHZ VCO 72LFCSP

SBR3U60P1-7

SBR3U60P1-7

Diodes Incorporated

DIODE SBR 60V 3A POWERDI123

JANTX2N4092

JANTX2N4092

Microsemi

JFET N-CH 40V 360MW TO-18

SSQ 2

SSQ 2

Bel Fuse

FUSE BOARD MNT 2A 125VAC/VDC SMD

STM32L476VGT6

STM32L476VGT6

STMicroelectronics

IC MCU 32BIT 1MB FLASH 100LQFP

MT29F2G01AAAEDH4-IT:E

MT29F2G01AAAEDH4-IT:E

Micron Technology Inc.

IC FLASH 2G SPI 63VFBGA

0001.2536

0001.2536

Schurter

FUSE CER 16A 250VAC 63VDC 3AB

SMBJ5.0CA

SMBJ5.0CA

TVS DIODE 5V 9.2V SMB

UC3842BN

UC3842BN

ON Semiconductor

IC REG CTRLR BST FLYBK ISO 8-DIP

DMN6075S-7

DMN6075S-7

Diodes Incorporated

MOSFET N-CH 60V 2A SOT23-3