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BSG0813NDIATMA1

BSG0813NDIATMA1

For Reference Only

Part Number BSG0813NDIATMA1
PNEDA Part # BSG0813NDIATMA1
Description MOSFET 2N-CH 25V 19A/33A 8TISON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,276
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSG0813NDIATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSG0813NDIATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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BSG0813NDIATMA1 Specifications

ManufacturerInfineon Technologies
Series-
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C19A, 33A
Rds On (Max) @ Id, Vgs3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 12V
Power - Max2.5W
Operating Temperature-55°C ~ 155°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TISON-8

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