BSG0813NDIATMA1

For Reference Only
Part Number | BSG0813NDIATMA1 |
PNEDA Part # | BSG0813NDIATMA1 |
Description | MOSFET 2N-CH 25V 19A/33A 8TISON |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 3,276 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BSG0813NDIATMA1 Resources
Brand | Infineon Technologies |
ECAD Module |
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Mfr. Part Number | BSG0813NDIATMA1 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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BSG0813NDIATMA1 Specifications
Manufacturer | Infineon Technologies |
Series | - |
FET Type | 2 N-Channel (Dual) Asymmetrical |
FET Feature | Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 19A, 33A |
Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 12V |
Power - Max | 2.5W |
Operating Temperature | -55°C ~ 155°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Supplier Device Package | PG-TISON-8 |
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