BSG0810NDIATMA1
For Reference Only
| Part Number | BSG0810NDIATMA1 |
| PNEDA Part # | BSG0810NDIATMA1 |
| Description | MOSFET 2N-CH 25V 19A/39A 8TISON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,912 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BSG0810NDIATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BSG0810NDIATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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Logistics Mode
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- Delivery date: usually 2 to 7 working days.
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BSG0810NDIATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 19A, 39A |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 12V |
| Power - Max | 2.5W |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TISON-8 |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Rds On (Max) @ Id, Vgs 18mOhm @ 9A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 360pF @ 15V Power - Max 17W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package PG-WISON-8 |
