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BSC883N03MSGATMA1

BSC883N03MSGATMA1

For Reference Only

Part Number BSC883N03MSGATMA1
PNEDA Part # BSC883N03MSGATMA1
Description MOSFET N-CH 34V 19A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,002
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC883N03MSGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC883N03MSGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC883N03MSGATMA1, BSC883N03MSGATMA1 Datasheet (Total Pages: 10, Size: 679.25 KB)
PDFBSC883N03MSGATMA1 Datasheet Cover
BSC883N03MSGATMA1 Datasheet Page 2 BSC883N03MSGATMA1 Datasheet Page 3 BSC883N03MSGATMA1 Datasheet Page 4 BSC883N03MSGATMA1 Datasheet Page 5 BSC883N03MSGATMA1 Datasheet Page 6 BSC883N03MSGATMA1 Datasheet Page 7 BSC883N03MSGATMA1 Datasheet Page 8 BSC883N03MSGATMA1 Datasheet Page 9 BSC883N03MSGATMA1 Datasheet Page 10

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BSC883N03MSGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)34V
Current - Continuous Drain (Id) @ 25°C19A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3200pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 57W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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