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BSC670N25NSFDATMA1

BSC670N25NSFDATMA1

For Reference Only

Part Number BSC670N25NSFDATMA1
PNEDA Part # BSC670N25NSFDATMA1
Description MOSFET N-CH 250V 24A 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,352
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC670N25NSFDATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC670N25NSFDATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC670N25NSFDATMA1, BSC670N25NSFDATMA1 Datasheet (Total Pages: 11, Size: 926.54 KB)
PDFBSC670N25NSFDATMA1 Datasheet Cover
BSC670N25NSFDATMA1 Datasheet Page 2 BSC670N25NSFDATMA1 Datasheet Page 3 BSC670N25NSFDATMA1 Datasheet Page 4 BSC670N25NSFDATMA1 Datasheet Page 5 BSC670N25NSFDATMA1 Datasheet Page 6 BSC670N25NSFDATMA1 Datasheet Page 7 BSC670N25NSFDATMA1 Datasheet Page 8 BSC670N25NSFDATMA1 Datasheet Page 9 BSC670N25NSFDATMA1 Datasheet Page 10 BSC670N25NSFDATMA1 Datasheet Page 11

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BSC670N25NSFDATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs67mOhm @ 24A, 10V
Vgs(th) (Max) @ Id4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2410pF @ 125V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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