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BSC350N20NSFDATMA1

BSC350N20NSFDATMA1

For Reference Only

Part Number BSC350N20NSFDATMA1
PNEDA Part # BSC350N20NSFDATMA1
Description MOSFET N-CH 200V 35A 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,284
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC350N20NSFDATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC350N20NSFDATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC350N20NSFDATMA1, BSC350N20NSFDATMA1 Datasheet (Total Pages: 11, Size: 931.05 KB)
PDFBSC350N20NSFDATMA1 Datasheet Cover
BSC350N20NSFDATMA1 Datasheet Page 2 BSC350N20NSFDATMA1 Datasheet Page 3 BSC350N20NSFDATMA1 Datasheet Page 4 BSC350N20NSFDATMA1 Datasheet Page 5 BSC350N20NSFDATMA1 Datasheet Page 6 BSC350N20NSFDATMA1 Datasheet Page 7 BSC350N20NSFDATMA1 Datasheet Page 8 BSC350N20NSFDATMA1 Datasheet Page 9 BSC350N20NSFDATMA1 Datasheet Page 10 BSC350N20NSFDATMA1 Datasheet Page 11

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BSC350N20NSFDATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs35mOhm @ 35A, 10V
Vgs(th) (Max) @ Id4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2410pF @ 100V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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