Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSC240N12NS3 G

BSC240N12NS3 G

For Reference Only

Part Number BSC240N12NS3 G
PNEDA Part # BSC240N12NS3-G
Description MOSFET N-CH 120V 37A 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 8 - Jun 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC240N12NS3 G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC240N12NS3 G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC240N12NS3 G, BSC240N12NS3 G Datasheet (Total Pages: 9, Size: 565.33 KB)
PDFBSC240N12NS3 G Datasheet Cover
BSC240N12NS3 G Datasheet Page 2 BSC240N12NS3 G Datasheet Page 3 BSC240N12NS3 G Datasheet Page 4 BSC240N12NS3 G Datasheet Page 5 BSC240N12NS3 G Datasheet Page 6 BSC240N12NS3 G Datasheet Page 7 BSC240N12NS3 G Datasheet Page 8 BSC240N12NS3 G Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSC240N12NS3 G Datasheet
  • where to find BSC240N12NS3 G
  • Infineon Technologies

  • Infineon Technologies BSC240N12NS3 G
  • BSC240N12NS3 G PDF Datasheet
  • BSC240N12NS3 G Stock

  • BSC240N12NS3 G Pinout
  • Datasheet BSC240N12NS3 G
  • BSC240N12NS3 G Supplier

  • Infineon Technologies Distributor
  • BSC240N12NS3 G Price
  • BSC240N12NS3 G Distributor

BSC240N12NS3 G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs24mOhm @ 31A, 10V
Vgs(th) (Max) @ Id4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 60V
FET Feature-
Power Dissipation (Max)66W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12.8mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5420pF @ 25V

FET Feature

-

Power Dissipation (Max)

390W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

FDMS86101

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

12.4A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN

IRF3709ZCSTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

87A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.3mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2130pF @ 15V

FET Feature

-

Power Dissipation (Max)

79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

DMP6350S-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

350mOhm @ 900mA, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

206pF @ 30V

FET Feature

-

Power Dissipation (Max)

720mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

PHB32N06LT,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 5V

Rds On (Max) @ Id, Vgs

37mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

1280pF @ 25V

FET Feature

-

Power Dissipation (Max)

97W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

PIC18F46K20-I/PT

PIC18F46K20-I/PT

Microchip Technology

IC MCU 8BIT 64KB FLASH 44TQFP

PIC16LF877A-I/L

PIC16LF877A-I/L

Microchip Technology

IC MCU 8BIT 14KB FLASH 44PLCC

ARF444

ARF444

Microsemi

PWR MOSFET RF N-CH 900V TO-247AD

DG455EY-T1-E3

DG455EY-T1-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

DS1624S+

DS1624S+

Maxim Integrated

SENSOR DIGITAL -55C-125C 8SOIC

BLM15AG221SN1D

BLM15AG221SN1D

Murata

FERRITE BEAD 220 OHM 0402 1LN

L7924CV

L7924CV

STMicroelectronics

IC REG LINEAR -24V 1.5A TO220AB

MMBT5551LT1G

MMBT5551LT1G

ON Semiconductor

TRANS NPN 160V 0.6A SOT23

AT89C51-24AI

AT89C51-24AI

Microchip Technology

IC MCU 8BIT 4KB FLASH 44TQFP

SMF6.0A

SMF6.0A

Littelfuse

TVS DIODE 6V 10.3V SOD123F

ICE3BR0665J

ICE3BR0665J

Infineon Technologies

IC OFFLINE CTRLR SMPS OTP 8DIP

MTFC4GACAJCN-4M IT

MTFC4GACAJCN-4M IT

Micron Technology Inc.

IC FLASH 32G MMC 153VFBGA